Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors

TitleDependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors
Publication TypeJournal Article
Year of Publication2020
AuthorsChow YChao, Lee C, Wong MS, Wu Y-R, Nakamura S, DenBaars SP, Bowers JE, Speck JS
JournalOptics Express
Volume28
Pagination23796–23805
DOI10.1364/OE.399924
Grant: 
CSC, MRL (new) (DMR-1720256), MRI (CNS-1725797)