Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study

TitleEffects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study
Publication TypeJournal Article
Year of Publication2009
AuthorsUmezawa N.
JournalAppl. Phys. Lett.
Volume94
Pagination22903