Title | Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel |
Publication Type | Journal Article |
Year of Publication | 2015 |
Authors | Miao M-S, Van de Walle CG |
Journal | Applied Physics Express |
Volume | 8 |
Pagination | 024302 |
Grant:
MRI R2 (CNS-0960316), CSC, MRL (DMR-1121053)