| Title | Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel |
| Publication Type | Journal Article |
| Year of Publication | 2015 |
| Authors | Miao M-S, Van de Walle CG |
| Journal | Applied Physics Express |
| Volume | 8 |
| Pagination | 024302 |
Grant:
MRI R2 (CNS-0960316), CSC, MRL (DMR-1121053)