Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel

TitleNitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel
Publication TypeJournal Article
Year of Publication2015
AuthorsMiao M-S, Van de Walle CG
JournalApplied Physics Express
Volume8
Pagination024302
Grant: 
MRI R2 (CNS-0960316), CSC, MRL (DMR-1121053)