Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material

TitleTheoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material
Publication TypeJournal Article
Year of Publication2012
AuthorsUmezawa N, Shiraishi K
JournalApplied Physics Letters
Volume100
Issue9
Pagination092904
Date Published02/2012
ISSN00036951
KeywordsCNSI, CSC, field effect transistors, hafnium compounds, oxidation, semiconductor doping, silicon, silicon compounds, tantalum
URLhttp://link.aip.org/link/?APPLAB/100/092904/1
DOI10.1063/1.3689968
Grant: 
CSC