Publications
Filters: Author is Van de Walle, Chris G [Clear All Filters]
Vacancies and small polarons in SrTiO 3. Physical Review B. 90:085202.
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2014. Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices. New Journal of Physics. 15:125006.
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2013. Sulfur doping of AlN and AlGaN for improved n-type conductivity. physica status solidi (RRL)-Rapid Research Letters. 9:462–465.
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2015. Sub-band-gap absorption in Ga2O3. Applied Physics Letters. 111:182104.
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2017. Structural origins of the properties of rare earth nickelate superlattices. Phys. Rev. B. 87(6):60101.
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2013. Role of oxygen vacancies in crystalline WO 3. Journal of Materials Chemistry C.
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2016. Point defects, impurities, and small hole polarons in GdTiO 3. Physical Review B. 93:115316.
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2016. Phase transformations upon doping in WO3. The Journal of Chemical Physics. 146:214504.
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2017. PCCP. Phys. Chem. Chem. Phys. 20:12373–12380.
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2018. Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.
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2014. Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel. Applied Physics Express. 8:024302.
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2015. Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.
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2013. Metal versus insulator behavior in ultrathin SrTiO 3-based heterostructures. Physical Review B. 94(3):035115(6).
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2016. LiH as a Li+ and H- ion provider. Solid State Ionics. 253:53–56.
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2013. Lack of quantum confinement in Ga 2 O 3 nanolayers. Physical Review B. 96:081409.
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2017. Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes. Applied Physics Letters. 101(23):231107-231107.
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2012. Interband and polaronic excitations in YTiO 3 from first principles. Physical Review B. 90:161102.
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2014. (In x Ga 1- x) 2 O 3 alloys for transparent electronics. Physical Review B. 92:085206.
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2015. Impact of Point Defects on Proton Conduction in Strontium Cerate. The Journal of Physical Chemistry C. 120:9562–9568.
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2016. Impact of point defects on electrochromism in WO 3. Oxide-based Materials and Devices IX.
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2018. Impact of native defects in high-k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices. physica status solidi (b). 250:787–791.
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2013. Identification of microscopic hole-trapping mechanisms in nitride semiconductors. IEEE Electron Device Letters. 37:154–156.
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2016. Hydrogen Passivation of Impurities in Al2O3. ACS applied materials & interfaces. 6:4149–4153.
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2014. Hydrogen intercalation in MoS 2. Physical Review B. 94(8):085426.
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2016. Hydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits. Scientific reports. 4
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