Publications

Filters: Author is Janotti, Anderson  [Clear All Filters]
Journal Article
Dreyer CE, Lyons JL, Janotti A, Van de Walle CG.  2014.  Band alignments and polarization properties of BN polymorphs. Applied Physics Express. 7:031001.
Krishnaswamy K, Bjaalie L, Himmetoglu B, Janotti A, Gordon L, Van de Walle CG.  2016.  BaSnO3 as a channel material in perovskite oxide heterostructures. Applied Physics Letters. 108(8):083501.
Dreyer CE, Janotti A, Van de Walle CG, Vanderbilt D.  2016.  Correct Implementation of Polarization Constants in Wurtzite Materials and Impact on III-Nitrides. Physical Review X. 6(2):021038.
Bjaalie L, Verma A, Himmetoglu B, Janotti A, Raghavan S, Protasenko V, Steenbergen EH, Jena D, Stemmer S, Van de Walle CG.  2015.  Determination of the Mott-Hubbard gap in GdTiO 3. Physical Review B. 92:085111.
Yan Q, Rinke P, Janotti A, Scheffler M, Van de Walle CG.  2014.  Effects of strain on the band structure of group-III nitrides. Physical Review B. 90:125118.
Freysoldt C, Lange B, Neugebauer J, Yan Q, Lyons JL, Janotti A, Van de Walle CG.  2016.  Electron and chemical reservoir corrections for point-defect formation energies. Physical Review B. 93:165206.
Krishnaswamy K, Himmetoglu B, Kang Y, Janotti A, Van de Walle CG.  2017.  First-principles analysis of electron transport in BaSnO 3. Physical Review B. 95:205202.
Himmetoglu B, Janotti A, Peelaers H, Alkauskas A, Van de Walle CG.  2014.  First-principles study of the mobility of SrTiO 3. Physical Review B. 90:241204.
Steiauf D, Lyons JL, Janotti A, Van de Walle CG.  2014.  First-principles study of vacancy-assisted impurity diffusion in ZnO. APL Materials. 2:096101.
Lyons JL, Alkauskas A, Janotti A, Van de Walle CG.  2015.  First-principles theory of acceptors in nitride semiconductors. physica status solidi (b). 252:900–908.
Gordon L, Abu-Farsakh H, Janotti A, Van de Walle CG.  2014.  Hydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits. Scientific reports. 4
Choi M, Janotti A, Van de Walle CG.  2014.  Hydrogen Passivation of Impurities in Al2O3. ACS applied materials & interfaces. 6:4149–4153.
Lyons JL, Krishnaswamy K, Gordon L, Janotti A, Van de Walle CG.  2016.  Identification of microscopic hole-trapping mechanisms in nitride semiconductors. IEEE Electron Device Letters. 37:154–156.
Choi M, Lyons JL, Janotti A, Van de Walle CG.  2013.  Impact of native defects in high-k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices. physica status solidi (b). 250:787–791.
Peelaers H, Steiauf D, Varley JB, Janotti A, Van de Walle CG.  2015.  (In x Ga 1- x) 2 O 3 alloys for transparent electronics. Physical Review B. 92:085206.
Himmetoglu B, Janotti A, Bjaalie L, Van de Walle CG.  2014.  Interband and polaronic excitations in YTiO 3 from first principles. Physical Review B. 90:161102.
Bjaalie L, Janotti A, Himmetoglu B, Van de Walle CG.  2016.  Metal versus insulator behavior in ultrathin SrTiO 3-based heterostructures. Physical Review B. 94(3):035115(6).
Choi M, Janotti A, Van de Walle CG.  2013.  Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.
Choi M, Janotti A, Van de Walle CG.  2013.  Native point defects in LaAlO3 : A hybrid functional study. Phys. Rev. B. 88:214117.
Yan Q, Janotti A, Scheffler M, Van de Walle CG.  2014.  Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.
Wang W, Janotti A, Van de Walle CG.  2017.  Phase transformations upon doping in WO3. The Journal of Chemical Physics. 146:214504.

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