Publications

Filters: Keyword is field effect transistors and Author is Umezawa, Naoto  [Clear All Filters]
A B C D E F G H I J K L M N O P Q R S T U V W X Y Z 
T
Umezawa N, Shiraishi K.  2012.  Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material. Applied Physics Letters. 100(9):092904.

Acknowledgements

Please acknowledge the CSC in publications and presentations if you are using our facilities computing resources in your research.

 

Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.

 

User Agreement

Click here to see important user agreement.  Non-compliance will result in suspension of your CSC account.