Publications

Filters: Author is Van de Walle, Chris G  [Clear All Filters]
Journal Article
Wang W, Kang Y, Peelaers H, Krishnaswamy K, Van de Walle CG.  2020.  First-principles study of transport in WO 3. Physical Review B. 101:045116.
Steiauf D, Lyons JL, Janotti A, Van de Walle CG.  2014.  First-principles study of vacancy-assisted impurity diffusion in ZnO. APL Materials. 2:096101.
Mu S, Wang M, Peelaers H, Van de Walle CG.  2020.  First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (Al x Ga1- x) 2O3. APL Materials. 8:091105.
Lyons JL, Alkauskas A, Janotti A, Van de Walle CG.  2015.  First-principles theory of acceptors in nitride semiconductors. physica status solidi (b). 252:900–908.
Kang Y, Krishnaswamy K, Peelaers H, Van de Walle CG.  2017.  Fundamental limits on the electron mobility of $\beta$-Ga2O3. Journal of Physics: Condensed Matter. 29:234001.
Adamski NL, Dreyer CE, Van de Walle CG.  2019.  Giant polarization charge density at lattice-matched GaN/ScN interfaces. Applied Physics Letters. 115:232103.
Adamski NL, Zhu Z, Wickramaratne D, Van de Walle CG.  2017.  Hybrid functional study of native point defects and impurities in ZnGeN2. Journal of Applied Physics. 122:195701.
Gordon L, Abu-Farsakh H, Janotti A, Van de Walle CG.  2014.  Hydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits. Scientific reports. 4
Zhu Z, Peelaers H, Van de Walle CG.  2016.  Hydrogen intercalation in MoS 2. Physical Review B. 94(8):085426.
Choi M, Janotti A, Van de Walle CG.  2014.  Hydrogen Passivation of Impurities in Al2O3. ACS applied materials & interfaces. 6:4149–4153.
Lyons JL, Krishnaswamy K, Gordon L, Janotti A, Van de Walle CG.  2016.  Identification of microscopic hole-trapping mechanisms in nitride semiconductors. IEEE Electron Device Letters. 37:154–156.
Choi M, Lyons JL, Janotti A, Van de Walle CG.  2013.  Impact of native defects in high-k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices. physica status solidi (b). 250:787–791.
Swift M, Van de Walle CG.  2016.  Impact of Point Defects on Proton Conduction in Strontium Cerate. The Journal of Physical Chemistry C. 120:9562–9568.
Peelaers H, Steiauf D, Varley JB, Janotti A, Van de Walle CG.  2015.  (In x Ga 1- x) 2 O 3 alloys for transparent electronics. Physical Review B. 92:085206.
Himmetoglu B, Janotti A, Bjaalie L, Van de Walle CG.  2014.  Interband and polaronic excitations in YTiO 3 from first principles. Physical Review B. 90:161102.
Kioupakis E, Yan Q, Van de Walle CG.  2012.  Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes. Applied Physics Letters. 101(23):231107-231107.
Peelaers H, Van de Walle CG.  2017.  Lack of quantum confinement in Ga 2 O 3 nanolayers. Physical Review B. 96:081409.
Hoang K, Van de Walle CG.  2013.  LiH as a Li+ and H- ion provider. Solid State Ionics. 253:53–56.
Bjaalie L, Janotti A, Himmetoglu B, Van de Walle CG.  2016.  Metal versus insulator behavior in ultrathin SrTiO 3-based heterostructures. Physical Review B. 94(3):035115(6).
Choi M, Janotti A, Van de Walle CG.  2013.  Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.
Miao M-S, Van de Walle CG.  2015.  Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel. Applied Physics Express. 8:024302.
Adamski NL, Zhu Z, Wickramaratne D, Van de Walle CG.  2019.  Optimizing n-type doping of ZnGeN 2 and ZnSiN 2. Physical Review B. 100:155206.
Yan Q, Janotti A, Scheffler M, Van de Walle CG.  2014.  Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.
Van de Walle CG.  2018.  PCCP. Phys. Chem. Chem. Phys. 20:12373–12380.
Wang W, Janotti A, Van de Walle CG.  2017.  Phase transformations upon doping in WO3. The Journal of Chemical Physics. 146:214504.

Pages