Publications

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Yan Q, Janotti A, Scheffler M, de Walle V, G C.  2012.  Role of nitrogen vacancies in the luminescence of Mg-doped GaN. Applied Physics Letters. 100:142110.
Yan L, Ravasio R, Brito C, Wyart M.  2017.  Architecture and coevolution of allosteric materials. Proceedings of the National Academy of Sciences. :201615536.
Yan L, Bouchaud J-P, Wyart M.  2017.  Edge mode amplification in disordered elastic networks. Soft matter. 13:5795–5801.
Yan L.  2018.  Entropy favors heterogeneous structures of networks near the rigidity threshold. Nature communications. 9:1359.
Yan L, DeGiuli E, Wyart M.  2016.  On variational arguments for vibrational modes near jamming. EPL (Europhysics Letters). 114:26003.
Yan Q, Rinke P, Scheffler M, Van de Walle CG.  2009.  Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN. Appl. Phys. Lett.. 95:121111.
Yan Q, Janotti A, Scheffler M, Van de Walle CG.  2014.  Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.
Yan Q, Rinke P, Scheffler M, Van de Walle CG.  2010.  Role of strain in polarization switching in semipolar InGaN/GaN quantum wells. Appl. Phys. Lett.. 97:181102.
Yan Q, Rinke P, Scheffler M, Van de Walle CG.  2009.  Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN. Appl. Phys. Lett.. 95:121111.
Yan Q, Rinke P, Janotti A, Scheffler M, Van de Walle CG.  2014.  Effects of strain on the band structure of group-III nitrides. Physical Review B. 90:125118.
Yan Q, Kioupakis E, Jena D, Van de Walle CG.  2014.  First-principles study of high-field-related electronic behavior of group-III nitrides. Physical Review B. 90:121201.
Yan L., Ravasio R., Brito C., Wyart M.  2018.  Principles for Optimal Cooperativity in Allosteric Materials. Biophysical Journal. 114(12):2787-2798.
Yan Q, Rinke P, Winkelnkemper M, Qteish A, Bimberg D, Scheffler M, Van de Walle CG.  2011.  Band parameters and strain effects in ZnO and group-III nitrides. Semicond. Sci. Technol.. 26:14037.

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