Publications
Filters: Author is A. Janotti [Clear All Filters]
Carbon-nitrogen molecules in GaAs and GaP. Phys. Rev. B. 77:195209.
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2008. Electrical activity of hydrogen impurities in GaSb: First-principles calculations. Phys. Rev. B. 78:35204.
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2008. Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.
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2008. Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.
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2008. Role of hydrogen at germanium/dielectric interfaces. Thin Solid Films. Volume 517, Issue 1, Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5):144-147.
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2008. Sources of Electrical Conductivity in SnO2. Phys. Rev. Lett.. 101:55502.
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2008. Sources of unintentional n-type conductivity in InN. Appl. Phys. Lett.. 92:32104.
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2008. Dangling-bond defects and hydrogen passivation in germanium. Appl. Phys. Lett.. 91:142101.
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2007. Hydrogen multicenter bonds. Nature Materials. 6:44-47.
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2007. Effects of cation d states on III-nitride and II-oxide wide-band-gap semiconductors. Physical Review B. 74:45202.
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2006. New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.
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2006. Oxygen vacancies in ZnO. Applied Physics Letters. 87:122102.
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2005.