Publications
Filters: Author is Lyons, John L [Clear All Filters]
First-principles theory of acceptors in nitride semiconductors. physica status solidi (b). 252:900–908.
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2015. Identification of microscopic hole-trapping mechanisms in nitride semiconductors. IEEE Electron Device Letters. 37:154–156.
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2016. Computationally predicted energies and properties of defects in GaN. NPJ Computational Materials. 3:1.
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2017. First-principles calculations of optical transitions at native defects and impurities in ZnO. Oxide-based Materials and Devices IX.
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2018.