Publications

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Lyons JL, Alkauskas A, Janotti A, Van de Walle CG.  2015.  First-principles theory of acceptors in nitride semiconductors. physica status solidi (b). 252:900–908.
Lyons JL, Krishnaswamy K, Gordon L, Janotti A, Van de Walle CG.  2016.  Identification of microscopic hole-trapping mechanisms in nitride semiconductors. IEEE Electron Device Letters. 37:154–156.
Lyons JL, Van de Walle CG.  2017.  Computationally predicted energies and properties of defects in GaN. NPJ Computational Materials. 3:1.
Lyons JL, Varley JB, Janotti A, Van de Walle CG.  2018.  First-principles calculations of optical transitions at native defects and impurities in ZnO. Oxide-based Materials and Devices IX.

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Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.

 

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