Publications

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Weston L., Wikramaratne D., Alkauskas A., Van de Walle C.G.  2018.  Native point defects and impurities in hexagonal boron nitride. Physical Review B. (97):1-13.
Weston L, Tailor H, Krishnaswamy K, Bjaalie L, Van de Walle CG.  2018.  Accurate and efficient band-offset calculations from density functional theory. Computational Materials Science. 151:174–180.
Weston L, Janotti A, Cui XY, Stampfl C, Van de Walle CG.  2017.  Acceptor doping in the proton conductor SrZrO 3. Physical Chemistry Chemical Physics. 19:11485–11491.
Weston L, Janotti A, Cui XY, Stampfl C, Van de Walle CG.  2014.  Hybrid functional calculations of point defects and hydrogen in SrZrO 3. Physical Review B. 89:184109.
Weston L, Bjaalie L, Krishnaswamy K, Van de Walle CG.  2018.  Origins of n-type doping difficulties in perovskite stannates. Physical Review B. 97:054112.
Welch GC, Bakus RCharles, Teat SJ, Bazan GC.  2013.  Impact of Regiochemistry and Isoelectronic Bridgehead Sub-stitution on the Molecular Shape and Bulk Organization of Narrow Bandgap Chromophores. Journal of the American Chemical Society. 135:2298.
Wei G., Shea J.-E.  2006.  Effects of solvent on the structure of the Alzheimer amyloid-b(25-35) peptide. Biophys. J.. 91:1638.
Wei G, Jewett AI, Shea J-E.  2010.  Structural diversity of dimers of the Alzheimer amyloid-β(25–35) peptide and polymorphism of the resulting fibrils. Phys. Chem. Chem. Phys. 12:3622.
Weber J.R, Janotti A., Van de Walle C.G.  2013.  Dangling bonds and vacancies in germanium. Phys. Rev. B. 87(3):35203.
Weber J.R., Koehl W.F., Varley J.B., Janotti A., Buckley B.B., Van de Walle C.G., Awschalom D.D..  2010.  Quantum Computing with Defects. Proc. Natl. Acad. Sci.. 107:8513.
Weber J.R., Janotti A., Van de Walle C.G..  2009.  Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
Weber J.R, Janotti A., Van de Walle C.G.  2011.  Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices. Journal of Applied Physics. 109(3):33715.
Weber J.R, Janotti A., Van de Walle C.G.  2010.  Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Appl. Phys. Lett.. 97:192106.
Weber J.R., Janotti A., Van de Walle C.G..  2009.  Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
Weber J.R, Koehl W.F, Varley J.B, Janotti A., Bucley B.B, Van de Walle C.G., Awschalom D.D.  2011.  Defects in SiC for quantum computing. J. Appl. Phys.. 109:102417.
Weber J.R, Janotti A., Rinke P., Van de Walle C.G.  2007.  Dangling-bond defects and hydrogen passivation in germanium. Appl. Phys. Lett.. 91:142101.
Watson MC, Morriss-Andrews A, Welch PM, Brown FLH.  2013.  Thermal fluctuations in shape, thickness, and molecular orientation in lipid bilayers. II. Finite surface tensions. The Journal of chemical physics. 139:084706.
Watson MC, Brandt EG, Welch PM, Brown FLH.  2012.  Determining Biomembrane Bending Rigidities from Simulations of Modest Size. Phys. Rev. Lett. 109:28102.
Wang L, Hung H-H, Troyer M.  2014.  Topological Phase Transition in the Hofstadter-Hubbard Model. arXiv preprint arXiv:1402.6704.
Wang M, Ford MJ, Lill AT, Phan H, Nguyen T-Q, Bazan GC.  2017.  Hole Mobility and Electron Injection Properties of D-A Conjugated Copolymers with Fluorinated Phenylene Acceptor Units. Advanced Materials. 29
Wang Y, Sigurdsson JKarl, Brandt E, Atzberger PJ.  2013.  Dynamic implicit-solvent coarse-grained models of lipid bilayer membranes: Fluctuating hydrodynamics thermostat. Physical Review E. 88:023301.
Wang W, Janotti A, Van de Walle CG.  2016.  Role of oxygen vacancies in crystalline WO 3. Journal of Materials Chemistry C.
Wang W, Janotti A, Van de Walle CG.  2017.  Phase transformations upon doping in WO3. The Journal of Chemical Physics. 146:214504.
Wang D, Li Y, Cai Z, Wu C.  2013.  Competing orders in the 2D half-filled SU (2N) Hubbard model through the pinning field quantum Monte-Carlo simulations. arXiv preprint arXiv:1305.3571.
Wang W, Peelaers H, Shen J-X, Janotti A, Van de Walle CG.  2018.  First-principles characterization of defects in WO 3. Oxide-based Materials and Devices IX.

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