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Filters: Author is Van de Walle, Chris G [Clear All Filters]

2015

Miao M-S, Van de Walle CG. 2015. Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel. Applied Physics Express. 8:024302.

Gordon L, Varley JB, Lyons JL, Janotti A, Van de Walle CG. 2015. Sulfur doping of AlN and AlGaN for improved n-type conductivity. physica status solidi (RRL)-Rapid Research Letters. 9:462–465.

2016

Bjaalie L, Azcatl A, McDonnell S, Freeze CR, Stemmer S, Wallace RM, Van de Walle CG. 2016. Band alignments between SmTiO3, GdTiO3, and SrTiO3. Journal of Vacuum Science & Technology A. 34:061102.

Freysoldt C, Lange B, Neugebauer J, Yan Q, Lyons JL, Janotti A, Van de Walle CG. 2016. Electron and chemical reservoir corrections for point-defect formation energies. Physical Review B. 93:165206.

Zhu Z, Peelaers H, Van de Walle CG. 2016. Hydrogen intercalation in MoS 2. Physical Review B. 94(8):085426.

Lyons JL, Krishnaswamy K, Gordon L, Janotti A, Van de Walle CG. 2016. Identification of microscopic hole-trapping mechanisms in nitride semiconductors. IEEE Electron Device Letters. 37:154–156.

Swift M, Van de Walle CG. 2016. Impact of Point Defects on Proton Conduction in Strontium Cerate. The Journal of Physical Chemistry C. 120:9562–9568.

Bjaalie L, Janotti A, Himmetoglu B, Van de Walle CG. 2016. Metal versus insulator behavior in ultrathin SrTiO 3-based heterostructures. Physical Review B. 94(3):035115(6).

Bjaalie L, Janotti A, Krishnaswamy K, Van de Walle CG. 2016. Point defects, impurities, and small hole polarons in GdTiO 3. Physical Review B. 93:115316.

Wang W, Janotti A, Van de Walle CG. 2016. Role of oxygen vacancies in crystalline WO 3. Journal of Materials Chemistry C.

2017

Lyons JL, Van de Walle CG. 2017. Computationally predicted energies and properties of defects in GaN. NPJ Computational Materials. 3:1.

Kang Y, Van de Walle CG. 2017. Electrical compensation mechanism in fluorine-doped SnO2. Applied Physics Letters. 111:152107.

Zhu Z, Peelaers H, Van de Walle CG. 2017. Electronic and protonic conduction in LaFeO 3. Journal of Materials Chemistry A.

Krishnaswamy K, Himmetoglu B, Kang Y, Janotti A, Van de Walle CG. 2017. First-principles analysis of electron transport in BaSnO 3. Physical Review B. 95:205202.

Kang Y, Krishnaswamy K, Peelaers H, Van de Walle CG. 2017. Fundamental limits on the electron mobility of $\beta$-Ga2O3. Journal of Physics: Condensed Matter. 29:234001.

Adamski NL, Zhu Z, Wickramaratne D, Van de Walle CG. 2017. Hybrid functional study of native point defects and impurities in ZnGeN2. Journal of Applied Physics. 122:195701.

Peelaers H, Van de Walle CG. 2017. Lack of quantum confinement in Ga 2 O 3 nanolayers. Physical Review B. 96:081409.

Wang W, Janotti A, Van de Walle CG. 2017. Phase transformations upon doping in WO3. The Journal of Chemical Physics. 146:214504.

Peelaers H, Van de Walle CG. 2017. Sub-band-gap absorption in Ga2O3. Applied Physics Letters. 111:182104.

2018

Lyons JL, Varley JB, Janotti A, Van de Walle CG. 2018. First-principles calculations of optical transitions at native defects and impurities in ZnO. Oxide-based Materials and Devices IX.

Wang W, Peelaers H, Shen J-X, Janotti A, Van de Walle CG. 2018. First-principles characterization of defects in WO 3. Oxide-based Materials and Devices IX.

Kang Y, Peelaers H, Krishnaswamy K, Van de Walle CG. 2018. First-principles study of direct and indirect optical absorption in BaSnO3. Applied Physics Letters. 112:062106.

Wang W, Peelaers H, Shen J-X, Janotti A, Van de Walle CG. 2018. Impact of point defects on electrochromism in WO 3. Oxide-based Materials and Devices IX.

Van de Walle CG. 2018. PCCP. Phys. Chem. Chem. Phys. 20:12373–12380.

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Acknowledgements

Please acknowledge the CSC in publications and presentations if you are using our facilities computing resources in your research.

Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.