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Turner TL, Miller PM. 2012. Investigating Natural Variation in Drosophila Courtship Song by the Evolve and Resequence Approach. Genetics. 191:633.

U

Umezawa N.. 2009. Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study. Appl. Phys. Lett.. 94:22903.

Umezawa N., Janotti A., Rinke P., Chikyow T., Van de Walle C.G. 2008. Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.

Umezawa N. 2010. Effects of capping HfO2 with multivalent oxides toward reducing the number of charged defects. Appl. Phys. Lett.. 96:162906.

Umezawa N, Ye J. 2012. Role of complex defects in photocatalytic activities of nitrogen-doped anatase TiO(2).. Physical Chemistry Chemical Physics. 14:5924–34.

Umezawa N., Shiraishi K., Chikyow T.. 2009. Stability of Si impurity in high-? oxides Microelectronic Engineering. 86:1780.

Umezawa N, Shiraishi K. 2012. Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material. Applied Physics Letters. 100(9):092904.

Umezawa N., Sato M., Shiraishi K.. 2008. Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study. Appl. Phys. Lett.. 93:223104.

Umezawa N, Shiraishi K. 2010. Origin of high solubility of silicon in La2O3: A first-principles study. Appl. Phys. Lett.. 97:202906.

D Upham C, Agarwal V, Khechfe A, Snodgrass ZR, Gordon MJ, Metiu H, McFarland EW. 2017. Catalytic molten metals for the direct conversion of methane to hydrogen and separable carbon. Science. 358:917–921.

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Van de Walle CG, Pelesa A., Janottia A., Wilson-Short G.B.. 2009. Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials. Physica B: Condensed Matter. 404(5-7):793.

Van de Walle C.G, Lyons J.L, Janotti A.. 2010. Controlling the conductivity of InN. physica status solidi (a). 207:1024.

Van de Walle CG, Janotti A. 2011. Advances in electronic structure methods for defects and impurities in solids. Phys. Status Solidi B. 248:19.

Van de Walle CG. 2018. PCCP. Phys. Chem. Chem. Phys. 20:12373–12380.

Van de Walle C.G, Pelesa A., Janottia A., Wilson-Shorta G.B.. 2008. Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials. Physica B. Physics of Condensed Matter

Van de Walle C.G., Weber J.R., Janotti A.. 2008. Role of hydrogen at germanium/dielectric interfaces. Thin Solid Films. Volume 517, Issue 1, Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5):144-147.

Van de Walle C.G., Choi M., Weber J.R., Lyons J.L., Janotti A.. 2013. Defects at Ge/oxide and IIIäóñV/oxide interfaces. Microelectronic Engineering. 109:211.

Van de Walle C.G, Segev D.. 2007. Microscopic origins of surface states on nitride surfaces. J. Appl. Phys.. 101:81704.

Van deWalle CG. 2008. Computational studies of conductivity in wide-band-gap semiconductors and oxides. J. Phys.. Condens. Matter:20.

Vanaparthy S.H., Meiburg E.. 2008. Variable density and viscosity, miscible displacements in capillary tubes. European Journal of Mechanics - B/Fluids. 27:268-289.

Vandervelden CA, Khan SA, Scott SL, Peters B. 2020. Site-averaged kinetics for catalysts on amorphous supports: an importance learning algorithm. Reaction Chemistry & Engineering. 5:77–86.

Vannozzi C.. 2012. Coalescence of surfactant covered drops in extensional flows-Effects of the interfacial diffusivity. Physics of Fluids. 24:82101.

Vannozzi C. 2012. Relaxation and coalescence of two equal-sized viscous drops in a quiescent matrix. J. Fluid Mech.. 694:408.

Varley J.B, Janotti A., Franchini C., Van de Walle C.G. 2012. Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides. Phys. Rev. B. 85:81109.

Varley J.B, Janotti A., Singh A.K, Van de Walle C.G. 2009. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.

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Acknowledgements

Please acknowledge the CSC in publications and presentations if you are using our facilities computing resources in your research.

Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.