Publications
Filters: Author is Krishnaswamy, Karthik [Clear All Filters]
BaSnO3 as a channel material in perovskite oxide heterostructures. Applied Physics Letters. 108(8):083501.
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2016. Identification of microscopic hole-trapping mechanisms in nitride semiconductors. IEEE Electron Device Letters. 37:154–156.
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2016. Point defects, impurities, and small hole polarons in GdTiO 3. Physical Review B. 93:115316.
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2016. First-principles analysis of electron transport in BaSnO 3. Physical Review B. 95:205202.
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2017. Fundamental limits on the electron mobility of $\beta$-Ga2O3. Journal of Physics: Condensed Matter. 29:234001.
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2017. First-principles study of direct and indirect optical absorption in BaSnO3. Applied Physics Letters. 112:062106.
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2018. First-principles study of transport in WO 3. Physical Review B. 101:045116.
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2020. Prospects for high carrier mobility in the cubic germanates. Semiconductor Science and Technology.
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2020.