Publications
Mn3+ in Trigonal Bipyramidal Coordination: a New Blue Chromophore. J. Am. Chem. Soc.. 131:17084-17086.
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2009. A pathway to p-type wide-band-gap semiconductors. Appl. Phys. Lett.. 95:172109.
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2009. Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
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2009. Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.
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2009. Role of Si and Ge as impurities in ZnO. Phys. Rev. B. 80:205113.
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2009. Single-molecule photon emission statistics for systems with explicit time dependence: Generating function approach. J. Chem. Phys.. 131:214107.
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2009. Stability of Si impurity in high-? oxides Microelectronic Engineering. 86:1780.
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2009. Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN. Appl. Phys. Lett.. 95:121111.
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2009. Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN. Appl. Phys. Lett.. 95:121111.
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2009. Superexchange-Driven Magnetoelectricity in Magnetic Vortices. Phys. Rev. Lett.. 102:157203.
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2009. Why nitrogen cannot lead to p-type conductivity in ZnO. Appl. Phys. Lett.. 95:252105.
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2009. Alternative sources of p-type conduction in acceptor-doped ZnO. Appl. Phys. Lett.. 97:72112.
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2010. Band bowing and band alignment in InGaN alloys. Appl. Phys. Lett.. 96:21908.
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2010. Carbon impurities and the yellow luminescence in GaN. Appl. Phys. Lett.. 97:152108.
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2010. Computational study of the dielectric properties of [La,Sc]2O3 solid solutions. Journal of Applied Physics. 107:74104.
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2010. Controlling the conductivity of InN. physica status solidi (a). 207:1024.
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2010. Determination of Internal Loss in Nitride Lasers from First Principles. Applied Physics Express. 3:82101.
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2010. Diffraction-limited high-finesse optical cavities. Physical Review A. 81(4):043814.
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2010. Distributed surface donor states and the two-dimensional electron gas at AlGaN/GaN heterojunctions. Journal of Physics D. 43:505501.
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2010. Dynamic Simulations of Multicomponent Lipid Membranes over Long Length and Time Scales. Phys. Rev. Lett.. 105:148102.
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2010. Effects of capping HfO2 with multivalent oxides toward reducing the number of charged defects. Appl. Phys. Lett.. 96:162906.
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2010. Electric and magnetic polarizabilities of hexagonal Ln2CuTiO6 (Ln=Y, Dy, Ho, Er and Yb). Phys. Rev. B 82, 134203 (2010). 82:134203.
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2010. Electron-lattice instabilities suppress cuprate-like electronic structures in SrFeO3/SrTiO3 superlattices. Phys. Rev. B. 81:85109.
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2010. Field-theoretic simulations in the Gibbs ensemble. J. Chem. Phys.. 132:24104.
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2010. Free-carrier absorption in nitrides from first principles. Phys. Rev. B. 81:241201.
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2010.