Publications

Filters: Author is Nakamura, Shuji  [Clear All Filters]
2020
Chow YChao, Lee C, Wong MS, Wu Y-R, Nakamura S, DenBaars SP, Bowers JE, Speck JS.  2020.  Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors. Optics Express. 28:23796–23805.
Kamei T, Kamikawa T, Araki M, DenBaars SP, Nakamura S, Bowers JE.  2020.  Research Toward a Heterogeneously Integrated InGaN Laser on Silicon. physica status solidi (a). 217:1900770.

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Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.

 

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