Publications

Search

Show only items where

Author

Type

Term

Year

Keyword

Filters: First Letter Of Last Name is L [Clear All Filters]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

L

Lyons JL, Janotti A, Van de Walle CG. 2013. Impact of Group-II Acceptors on the Electrical and Optical Properties of GaN. J. Appl. Phys.. 52:08JJ04.

Lyons J.L, Janotti A., Van de Walle C.G. 2009. Why nitrogen cannot lead to p-type conductivity in ZnO. Appl. Phys. Lett.. 95:252105.

Lyons JL, Janotti A, Van de Walle CG. 2014. Effects of hole localization on limiting p-type conductivity in oxide and nitride semiconductors. Journal of Applied Physics. 115:012014.

Lyons J.L, Janotti A., Van de Walle C.G. 2009. Role of Si and Ge as impurities in ZnO. Phys. Rev. B. 80:205113.

Lyons JL, Van de Walle CG. 2017. Computationally predicted energies and properties of defects in GaN. NPJ Computational Materials. 3:1.

Lyons JL, Van de Walle CG. 2016. Surprising stability of neutral interstitial hydrogen in diamond and cubic BN. Journal of Physics: Condensed Matter. 28:06LT01.

Lyons J.L, Janotti A., Van de Walle C.G. 2010. Carbon impurities and the yellow luminescence in GaN. Appl. Phys. Lett.. 97:152108.

Pages

Acknowledgements

Please acknowledge the CSC in publications and presentations if you are using our facilities computing resources in your research.

Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.