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Van de Walle C.G, Lyons J.L, Janotti A.. 2010. Controlling the conductivity of InN. physica status solidi (a). 207:1024.

Van de Walle C.G, Pelesa A., Janottia A., Wilson-Shorta G.B.. 2008. Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials. Physica B. Physics of Condensed Matter

Van de Walle C.G., Weber J.R., Janotti A.. 2008. Role of hydrogen at germanium/dielectric interfaces. Thin Solid Films. Volume 517, Issue 1, Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5):144-147.

Van de Walle CG, Janotti A. 2011. Advances in electronic structure methods for defects and impurities in solids. Phys. Status Solidi B. 248:19.

Van de Walle C.G, Segev D.. 2007. Microscopic origins of surface states on nitride surfaces. J. Appl. Phys.. 101:81704.

Van de Walle CG. 2018. PCCP. Phys. Chem. Chem. Phys. 20:12373–12380.

Van de Walle CG, Pelesa A., Janottia A., Wilson-Short G.B.. 2009. Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials. Physica B: Condensed Matter. 404(5-7):793.

Van de Walle C.G., Choi M., Weber J.R., Lyons J.L., Janotti A.. 2013. Defects at Ge/oxide and IIIäóñV/oxide interfaces. Microelectronic Engineering. 109:211.

U

D Upham C, Agarwal V, Khechfe A, Snodgrass ZR, Gordon MJ, Metiu H, McFarland EW. 2017. Catalytic molten metals for the direct conversion of methane to hydrogen and separable carbon. Science. 358:917–921.

Umezawa N.. 2009. Effects of barium incorporation into HfO2 gate dielectrics on reduction in charged defects: First-principles study. Appl. Phys. Lett.. 94:22903.

Umezawa N, Shiraishi K. 2010. Origin of high solubility of silicon in La2O3: A first-principles study. Appl. Phys. Lett.. 97:202906.

Umezawa N, Shiraishi K. 2012. Theoretical model for artificial structure modulation of HfO2/SiOx/Si interface by deposition of a dopant material. Applied Physics Letters. 100(9):092904.

Umezawa N., Janotti A., Rinke P., Chikyow T., Van de Walle C.G. 2008. Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.

Umezawa N., Shiraishi K., Chikyow T.. 2009. Stability of Si impurity in high-? oxides Microelectronic Engineering. 86:1780.

Umezawa N. 2010. Effects of capping HfO2 with multivalent oxides toward reducing the number of charged defects. Appl. Phys. Lett.. 96:162906.

Umezawa N., Sato M., Shiraishi K.. 2008. Reduction in charged defects associated with oxygen vacancies in hafnia by magnesium incorporation: First-principles study. Appl. Phys. Lett.. 93:223104.

Umezawa N, Ye J. 2012. Role of complex defects in photocatalytic activities of nitrogen-doped anatase TiO(2).. Physical Chemistry Chemical Physics. 14:5924–34.

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Turner T, Giauque CC, Schrider DR, Kern AD. 2014. Genome-wide association of foraging behavior in Drosophila melanogaster fails to support large-effect alleles at the foraging gene. bioRxiv. :004325.

Turner TL, Miller PM. 2012. Investigating Natural Variation in Drosophila Courtship Song by the Evolve and Resequence Approach. Genetics. 191:633.

Turner T, Giauque CC, Schrider DR, Kern AD. 2015. Behavioral variation in Drosophila melanogaster: no evidence for common alleles of large-effect at the foraging gene in a population from North Carolina, USA. bioRxiv. :004325.

Turner TL, Miller PM, Cochrane VA. 2013. Combining Genome-Wide Methods to Investigate the Genetic Complexity of Courtship Song Variation in Drosophila melanogaster. Molecular Biology and Evolution. 30:2113-2120.

Turner TL, Bourne EC, Von Wettberg EJ, Hu TT, Nuzhdin SV. 2010. Population resequencing reveals local adaptation of Arabidopsis lyrata to serpentine soils. Nature Genetics. 42:260-263.

Tsang BT-H, Schultz WC. 2019. Deep Neural Network Classifier for Variable Stars with Novelty Detection Capability. The Astrophysical Journal Letters. 877:L14.

Tsai CL, Delaney KT, Fredrickson GH. 2016. Genetic Algorithm for Discovery of Globally Stable Phases in Block Copolymers. Macromolecules. 49(17):6558–6567.

Trusty T, Xu S, Beyerlein IJ. 2019. Atomistic simulations of tungsten nanotubes under uniform tensile loading. Journal of Applied Physics. 126:095105.

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Acknowledgements

Please acknowledge the CSC in publications and presentations if you are using our facilities computing resources in your research.

Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.