Publications
Filters: Author is A. Janotti [Clear All Filters]
Group-V impurities in SnO2 from first-principles calculations. Phys. Rev. B. 81:245216.
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2010. Electrical activity of hydrogen impurities in GaSb: First-principles calculations. Phys. Rev. B. 78:35204.
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2008. Effects of strain on the electron effective mass in GaN and AlN. Appl. Phys. Lett.. 102:142105.
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2013. Effects of doping on the lattice parameter of SrTiO3. Appl. Phys. Lett.. 100:262104.
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2012. Effects of cation d states on III-nitride and II-oxide wide-band-gap semiconductors. Physical Review B. 74:45202.
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2006. Defects in SiC for quantum computing. J. Appl. Phys.. 109:102417.
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2011. Defects at Ge/oxide and IIIäóñV/oxide interfaces. Microelectronic Engineering. 109:211.
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2013. Decomposition mechanism and the effects of metal additives on the kinetics of lithium alanate. Phys. Chem. Chem. Phys.. 14:2840.
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2012. Dangling-bond defects and hydrogen passivation in germanium. Appl. Phys. Lett.. 91:142101.
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2007. Controlling the conductivity of InN. physica status solidi (a). 207:1024.
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2010. Carbon-nitrogen molecules in GaAs and GaP. Phys. Rev. B. 77:195209.
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2008. Carbon impurities and the yellow luminescence in GaN. Appl. Phys. Lett.. 97:152108.
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2010.