Publications
Filters: Author is Van de Walle, Chris G [Clear All Filters]
Effects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes. Applied Physics Letters. 105:083507.
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2014. Determination of the Mott-Hubbard gap in GdTiO 3. Physical Review B. 92:085111.
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2015. Conductivity and transparency of TiO2 from first principles. SPIE Solar Energy+ Technology.
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2013. Computationally predicted energies and properties of defects in GaN. NPJ Computational Materials. 3:1.
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2017. Brillouin zone and band structure of $\beta$-Ga2O3. physica status solidi (b). 252:828–832.
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2015. Band alignments between SmTiO3, GdTiO3, and SrTiO3. Journal of Vacuum Science & Technology A. 34:061102.
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2016. Band alignments and polarization properties of the Zn-IV-nitrides. Journal of Materials Chemistry C.
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2020. Band alignments and polarization properties of BN polymorphs. Applied Physics Express. 7:031001.
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2014. Auger Recombination in GaAs from First Principles. ACS Photonics. 1:643–646.
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2014. Ab initio study of enhanced thermal conductivity in ordered AlGaO3 alloys. Applied Physics Letters. 115:242103.
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2019.