Publications

Search

Show only items where

Author

Type

Term

Year

Keyword

Filters: First Letter Of Last Name is J [Clear All Filters]

A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

J

Jun X, Shuozhi X, Beyerlein I. 2019. Atomistic simulations of dipole tilt wall stability in thin films. Thin Solid Films.

Joswiak MN, Duff N, Doherty MF, Peters B. 2013. Size-Dependent Surface Free Energy and Tolman-Corrected Droplet Nucleation of TIP4P/2005 Water. The Journal of Physical Chemistry Letters. 4:4267-4272.

Joswiak MN, Peters B, Doherty MF. 2018. In Silico Crystal Growth Rate Prediction for NaCl from Aqueous Solution. Crystal Growth & Design. 18:6302–6306.

Joswiak MN, Doherty MF, Peters B. 2018. Ion dissolution mechanism and kinetics at kink sites on NaCl surfaces. Proceedings of the National Academy of Sciences. :201713452.

Joswiak MN, Doherty MF, Peters B. 2016. Critical length of a one-dimensional nucleus. Journal of Chemical Physics. 145(21):6.

Johnson KM, Hofmann GE. 2016. A transcriptome resource for the Antarctic pteropod Limacina helicina antarctica. Marine Genomics. 28:25-28.

Jiang H-C, Block MS, Mishmash RV, Garrison JR, Sheng D.N, Motrunich OI, Fisher MPA. 2013. Non-Fermi-liquid d-wave metal phase of strongly interacting electrons. Nature. 493:39-44.

Jiang H-C, Balents L. 2013. Collapsing Schr$\backslash$" odinger Cats in the Density Matrix Renormalization Group. arXiv preprint arXiv:1309.7438.

Jiang H-C, Singh RRP, Balents L. 2013. Accuracy of topological entanglement entropy on finite cylinders. Physical Review Letters. 111:107205.

Jian W-R, Zhang M, Xu S, Beyerlein I. 2020. Atomistic simulations of dynamics of an edge dislocation and its interaction with a void in copper: A comparative study. Modelling and Simulation in Materials Science and Engineering.

Jho Y.S, Kim M.W, Pincus P.A, Brown F.LH. 2008. A numerical study of the electrostatic properties of two finite-width charged dielectric slabs in water. J. Chem. Phys.. 129:134511.

Janotti A., Varley J.B, Rinke P., Umezawa N., Kresse G., Van de Walle C.G. 2010. Hybrid functional studies of the oxygen vacancy in TiO2. Phys. Rev. B. 81:85212.

Janotti A, Bjaalie L, Gordon L, Van de Walle CG. 2012. Controlling the density of the two-dimensional electron gas at the SrTiO3-LaAlO3 interface. Phys. Rev. B. 86(24):241108.

Janotti A., Van de Walle C.G. 2008. Sources of unintentional n-type conductivity in InN. Appl. Phys. Lett.. 92:32104.

Janotti A, Varley JB, Choi M, Van de Walle CG. 2014. Vacancies and small polarons in SrTiO 3. Physical Review B. 90:085202.

Janotti A., Steiauf D., Van de Walle C.G. 2011. Strain effects on the electronic structure of SrTiO3: Toward high electron mobilities. Phys. Rev. B. 84:201304.

Janotti A., Van de Walle C.G. 2005. Oxygen vacancies in ZnO. Applied Physics Letters. 87:122102.

Janotti A, Bjaalie L, Himmetoglu B, Van de Walle CG. 2014. Band alignment at band-insulator/Mott-insulator interfaces. physica status solidi (RRL)-Rapid Research Letters.

Janotti A., Van de Walle C.G.. 2011. The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2. Microelectronic Engineering. 88(7):1452-1456.

Janotti A., Van de Walle C.G. 2006. New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.

Janotti A., Reunchan P., Limpijumnong S., Van de Walle C.G. 2008. Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.

Janotti A, Van de Walle CG. 2011. LDA and hybrid functional calculations for defects in ZnO, SnO2, and TiO2. Physica Status Solidi (b). 248:799.

Janotti A., Segev D., Van de Walle C.G. 2006. Effects of cation d states on III-nitride and II-oxide wide-band-gap semiconductors. Physical Review B. 74:45202.

Janotti A, Franchini C, Varley JB, Kresse G, Van de Walle CG. 2013. Dual behavior of excess electrons in rutile TiO2. physica status solidi (RRL)-Rapid Research Letters. doi: 10.1002/pssr.201206464

Janotti A, Snow E, Van de Walle CG. 2009. A pathway to p-type wide-band-gap semiconductors. Appl. Phys. Lett.. 95:172109.

Pages

Acknowledgements

Please acknowledge the CSC in publications and presentations if you are using our facilities computing resources in your research.

Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.