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Jun X, Shuozhi X, Beyerlein I. 2019. Atomistic simulations of dipole tilt wall stability in thin films. Thin Solid Films.

Joswiak MN, Peters B, Doherty MF. 2018. In Silico Crystal Growth Rate Prediction for NaCl from Aqueous Solution. Crystal Growth & Design. 18:6302–6306.

Joswiak MN, Doherty MF, Peters B. 2018. Ion dissolution mechanism and kinetics at kink sites on NaCl surfaces. Proceedings of the National Academy of Sciences. :201713452.

Joswiak MN, Doherty MF, Peters B. 2016. Critical length of a one-dimensional nucleus. Journal of Chemical Physics. 145(21):6.

Joswiak MN, Duff N, Doherty MF, Peters B. 2013. Size-Dependent Surface Free Energy and Tolman-Corrected Droplet Nucleation of TIP4P/2005 Water. The Journal of Physical Chemistry Letters. 4:4267-4272.

Johnson JM, Huang H-L, Wang M, Mu S, Varley JB, Bhuiyan AFMAnhar Uddi, Feng Z, Kalarickal NKurian, Rajan S, Zhao H et al.. 2021. Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1- x) 2O3 films. APL Materials. 9:051103.

Johnson KM, Hofmann GE. 2016. A transcriptome resource for the Antarctic pteropod Limacina helicina antarctica. Marine Genomics. 28:25-28.

Jiao S, DeStefano A, Monroe JI, Barry M, Sherck N, Casey T, Segalman RA, Han S, M Shell S. 2021. Quantifying Polypeptoid Conformational Landscapes through Integrated Experiment and Simulation. Macromolecules.

Jiang H-C, Block MS, Mishmash RV, Garrison JR, Sheng D.N, Motrunich OI, Fisher MPA. 2013. Non-Fermi-liquid d-wave metal phase of strongly interacting electrons. Nature. 493:39-44.

Jiang H-C, Balents L. 2013. Collapsing Schr$\backslash$" odinger Cats in the Density Matrix Renormalization Group. arXiv preprint arXiv:1309.7438.

Jiang H-C, Singh RRP, Balents L. 2013. Accuracy of topological entanglement entropy on finite cylinders. Physical Review Letters. 111:107205.

Jian W-R, Xu S, Beyerlein IJ. 2020. On the significance of model design in atomistic calculations of the Peierls stress in Nb. Computational Materials Science. :110150.

Jian W-R, Zhang M, Xu S, Beyerlein I. 2020. Atomistic simulations of dynamics of an edge dislocation and its interaction with a void in copper: A comparative study. Modelling and Simulation in Materials Science and Engineering.

Jho Y.S, Kim M.W, Pincus P.A, Brown F.LH. 2008. A numerical study of the electrostatic properties of two finite-width charged dielectric slabs in water. J. Chem. Phys.. 129:134511.

Janotti A., Van de Walle C.G. 2005. Oxygen vacancies in ZnO. Applied Physics Letters. 87:122102.

Janotti A, Bjaalie L, Himmetoglu B, Van de Walle CG. 2014. Band alignment at band-insulator/Mott-insulator interfaces. physica status solidi (RRL)-Rapid Research Letters.

Janotti A., Van de Walle C.G.. 2011. The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2. Microelectronic Engineering. 88(7):1452-1456.

Janotti A., Van de Walle C.G. 2006. New insights into the role of native point defects in ZnO. Journal of Crystal Growth. 287:58-65.

Janotti A., Reunchan P., Limpijumnong S., Van de Walle C.G. 2008. Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.

Janotti A, Van de Walle CG. 2011. LDA and hybrid functional calculations for defects in ZnO, SnO2, and TiO2. Physica Status Solidi (b). 248:799.

Janotti A., Segev D., Van de Walle C.G. 2006. Effects of cation d states on III-nitride and II-oxide wide-band-gap semiconductors. Physical Review B. 74:45202.

Janotti A, Franchini C, Varley JB, Kresse G, Van de Walle CG. 2013. Dual behavior of excess electrons in rutile TiO2. physica status solidi (RRL)-Rapid Research Letters. doi: 10.1002/pssr.201206464

Janotti A, Snow E, Van de Walle CG. 2009. A pathway to p-type wide-band-gap semiconductors. Appl. Phys. Lett.. 95:172109.

Janotti A., Jalan B., Stemmer S., Van de Walle C.G. 2012. Effects of doping on the lattice parameter of SrTiO3. Appl. Phys. Lett.. 100:262104.

Janotti A., Van de Walle C.G. 2007. Hydrogen multicenter bonds. Nature Materials. 6:44-47.

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Acknowledgements

Please acknowledge the CSC in publications and presentations if you are using our facilities computing resources in your research.

Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.