Publications
Filters: Author is Janotti, Anderson [Clear All Filters]
Vacancies and small polarons in SrTiO 3. Physical Review B. 90:085202.
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2014. Transport properties of KTaO3 from first-principles. Journal of Physics: Condensed Matter. 28:065502.
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2016. Sulfur doping of AlN and AlGaN for improved n-type conductivity. physica status solidi (RRL)-Rapid Research Letters. 9:462–465.
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2015. Structural origins of the properties of rare earth nickelate superlattices. Phys. Rev. B. 87(6):60101.
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2013. Small polaron-related recombination in BaxSr1- xTiO3 thin films by cathodoluminescence spectroscopy. Applied Physics Letters. 108:102901.
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2016. Role of oxygen vacancies in crystalline WO 3. Journal of Materials Chemistry C.
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2016. Role of nitrogen vacancies in the luminescence of Mg-doped GaN. Applied Physics Letters. 100:142110.
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2012. Point defects, impurities, and small hole polarons in GdTiO 3. Physical Review B. 93:115316.
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2016. Phase transformations upon doping in WO3. The Journal of Chemical Physics. 146:214504.
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2017. Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.
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2014. Native point defects in LaAlO3 : A hybrid functional study. Phys. Rev. B. 88:214117.
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2013. Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.
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2013. Metal versus insulator behavior in ultrathin SrTiO 3-based heterostructures. Physical Review B. 94(3):035115(6).
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2016. Interband and polaronic excitations in YTiO 3 from first principles. Physical Review B. 90:161102.
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2014. (In x Ga 1- x) 2 O 3 alloys for transparent electronics. Physical Review B. 92:085206.
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2015. Impact of native defects in high-k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices. physica status solidi (b). 250:787–791.
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2013. Identification of microscopic hole-trapping mechanisms in nitride semiconductors. IEEE Electron Device Letters. 37:154–156.
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2016. Hydrogen Passivation of Impurities in Al2O3. ACS applied materials & interfaces. 6:4149–4153.
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2014. Hydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits. Scientific reports. 4
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2014. First-principles theory of acceptors in nitride semiconductors. physica status solidi (b). 252:900–908.
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2015. First-principles study of vacancy-assisted impurity diffusion in ZnO. APL Materials. 2:096101.
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2014. First-principles study of the mobility of SrTiO 3. Physical Review B. 90:241204.
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2014. First-principles analysis of electron transport in BaSnO 3. Physical Review B. 95:205202.
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2017. Electron and chemical reservoir corrections for point-defect formation energies. Physical Review B. 93:165206.
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2016. Effects of strain on the band structure of group-III nitrides. Physical Review B. 90:125118.
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2014.