Publications

Filters: Author is Wang, Mengen  [Clear All Filters]
2022
Mu S, Wang M, Varley JB, Lyons JL, Wickramaratne D, Van de Walle CG.  2022.  Role of carbon and hydrogen in limiting n-type doping of monoclinic (AlxGa1−x)2O3. Physical Review B. 105:155201.
2021
Wang M, Mu S, Van de Walle CG.  2021.  Adsorption and Diffusion of Aluminum on β-Ga2O3 (010) Surfaces. ACS Applied Materials & Interfaces. 13:10650–10655.
Johnson JM, Huang H-L, Wang M, Mu S, Varley JB, Bhuiyan AFMAnhar Uddi, Feng Z, Kalarickal NKurian, Rajan S, Zhao H et al..  2021.  Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1- x) 2O3 films. APL Materials. 9:051103.
Wang M, Mu S, Van de Walle CG.  2021.  Incorporation of Si and Sn donors in β-Ga2O3 through surface reconstructions. Journal of Applied Physics. 130:185703.
2020
Mu S, Wang M, Peelaers H, Van de Walle CG.  2020.  First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (Al x Ga1- x) 2O3. APL Materials. 8:091105.

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Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.

 

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