Publications
Filters: Author is C. G. Van de Walle [Clear All Filters]
Effects of strain on the electron effective mass in GaN and AlN. Appl. Phys. Lett.. 102:142105.
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2013. Decomposition mechanism and the effects of metal additives on the kinetics of lithium alanate. Phys. Chem. Chem. Phys.. 14:2840.
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2012. Effects of doping on the lattice parameter of SrTiO3. Appl. Phys. Lett.. 100:262104.
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2012. Mechanism for the decomposition of lithium borohydride. International Journal of Hydrogen Energy. 37:5825.
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2012. Mechanisms for the decomposition and dehydrogenation of Li amide/imide. Phys. Rev. B. 85:64115.
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2012. Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides. Phys. Rev. B. 85:81109.
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2012. Strain effects on the electronic structure of SrTiO3: Toward high electron mobilities. Phys. Rev. B. 84:201304.
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2011. Tin dioxide from first principles: Quasiparticle electronic states and optical properties. Phys. Rev. B. 83:35116.
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2011. Carbon impurities and the yellow luminescence in GaN. Appl. Phys. Lett.. 97:152108.
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2010. Controlling the conductivity of InN. physica status solidi (a). 207:1024.
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2010. Group-V impurities in SnO2 from first-principles calculations. Phys. Rev. B. 81:245216.
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2010. Hybrid functional studies of the oxygen vacancy in TiO2. Phys. Rev. B. 81:85212.
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2010. Hydrogen donors in SnO2 studied by infrared spectroscopy and first-principles calculations. Phys. Rev. B. 82:193201.
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2010. Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Appl. Phys. Lett.. 97:192106.
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2010. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
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2009. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.
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2009. Role of Si and Ge as impurities in ZnO. Phys. Rev. B. 80:205113.
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2009. Why nitrogen cannot lead to p-type conductivity in ZnO. Appl. Phys. Lett.. 95:252105.
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2009. Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials. Physica B. Physics of Condensed Matter
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2008. Carbon-nitrogen molecules in GaAs and GaP. Phys. Rev. B. 77:195209.
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2008. Electrical activity of hydrogen impurities in GaSb: First-principles calculations. Phys. Rev. B. 78:35204.
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2008. Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.
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2008. Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.
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2008. Sources of Electrical Conductivity in SnO2. Phys. Rev. Lett.. 101:55502.
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2008. Sources of unintentional n-type conductivity in InN. Appl. Phys. Lett.. 92:32104.
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