Publications

Filters: Author is C. G. Van de Walle [Clear All Filters]

2013

Dreyer C.E, Janotti A., Van de Walle C.G. 2013. Effects of strain on the electron effective mass in GaN and AlN. Appl. Phys. Lett.. 102:142105.

2012

Hoang K., Janotti A., Van de Walle C.G. 2012. Decomposition mechanism and the effects of metal additives on the kinetics of lithium alanate. Phys. Chem. Chem. Phys.. 14:2840.

Janotti A., Jalan B., Stemmer S., Van de Walle C.G. 2012. Effects of doping on the lattice parameter of SrTiO3. Appl. Phys. Lett.. 100:262104.

Hoang K., Van de Walle C.G. 2012. Mechanism for the decomposition of lithium borohydride. International Journal of Hydrogen Energy. 37:5825.

Hoang K., Janotti A., Van de Walle C.G. 2012. Mechanisms for the decomposition and dehydrogenation of Li amide/imide. Phys. Rev. B. 85:64115.

Varley J.B, Janotti A., Franchini C., Van de Walle C.G. 2012. Role of self-trapping in luminescence and p-type conductivity of wide-band-gap oxides. Phys. Rev. B. 85:81109.

2011

Janotti A., Steiauf D., Van de Walle C.G. 2011. Strain effects on the electronic structure of SrTiO3: Toward high electron mobilities. Phys. Rev. B. 84:201304.

Schleife A., Varley J.B, Fuchs F., Rödl C., Bechstedt F., Rinke P., Janotti A., Van de Walle C.G. 2011. Tin dioxide from first principles: Quasiparticle electronic states and optical properties. Phys. Rev. B. 83:35116.

2010

Lyons J.L, Janotti A., Van de Walle C.G. 2010. Carbon impurities and the yellow luminescence in GaN. Appl. Phys. Lett.. 97:152108.

Van de Walle C.G, Lyons J.L, Janotti A.. 2010. Controlling the conductivity of InN. physica status solidi (a). 207:1024.

Varley J.B, Janotti A., Van de Walle C.G. 2010. Group-V impurities in SnO2 from first-principles calculations. Phys. Rev. B. 81:245216.

Janotti A., Varley J.B, Rinke P., Umezawa N., Kresse G., Van de Walle C.G. 2010. Hybrid functional studies of the oxygen vacancy in TiO2. Phys. Rev. B. 81:85212.

Oo W.MHlaing, Tabatabaei S., McCluskey M.D, Varley J.B, Janotti A., Van de Walle C.G. 2010. Hydrogen donors in SnO2 studied by infrared spectroscopy and first-principles calculations. Phys. Rev. B. 82:193201.

Weber J.R, Janotti A., Van de Walle C.G. 2010. Intrinsic and extrinsic causes of electron accumulation layers on InAs surfaces. Appl. Phys. Lett.. 97:192106.

2009

Varley J.B, Janotti A., Singh A.K, Van de Walle C.G. 2009. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.

Varley J.B, Janotti A., Singh A.K, Van de Walle C.G. 2009. Hydrogen interactions with acceptor impurities in SnO2: First-principles calculations. Phys. Rev. B. 79:245206.

Lyons J.L, Janotti A., Van de Walle C.G. 2009. Role of Si and Ge as impurities in ZnO. Phys. Rev. B. 80:205113.

Lyons J.L, Janotti A., Van de Walle C.G. 2009. Why nitrogen cannot lead to p-type conductivity in ZnO. Appl. Phys. Lett.. 95:252105.

2008

Van de Walle C.G, Pelesa A., Janottia A., Wilson-Shorta G.B.. 2008. Atomic and electronic structure of hydrogen-related centers in hydrogen storage materials. Physica B. Physics of Condensed Matter

Limpijumnong S., Reunchan P., Janotti A., Van de Walle C.G. 2008. Carbon-nitrogen molecules in GaAs and GaP. Phys. Rev. B. 77:195209.

Peles A., Janotti A., Van de Walle C.G. 2008. Electrical activity of hydrogen impurities in GaSb: First-principles calculations. Phys. Rev. B. 78:35204.

Janotti A., Reunchan P., Limpijumnong S., Van de Walle C.G. 2008. Mutual Passivation of Electrically Active and Isovalent Impurities in Dilute Nitrides. Phys. Rev. Lett.. 100:45505.

Umezawa N., Janotti A., Rinke P., Chikyow T., Van de Walle C.G. 2008. Optimizing optical absorption of TiO2 by alloying with TiS2. Appl. Phys. Lett.. 92:41104.

Singh A.K, Janotti A., Scheffler M., Van de Walle C.G. 2008. Sources of Electrical Conductivity in SnO2. Phys. Rev. Lett.. 101:55502.

Janotti A., Van de Walle C.G. 2008. Sources of unintentional n-type conductivity in InN. Appl. Phys. Lett.. 92:32104.

Pages

Acknowledgements

Please acknowledge the CSC in publications and presentations if you are using our facilities computing resources in your research.

Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.