Publications

Filters: Author is Van de Walle, Chris G  [Clear All Filters]
Journal Article
Mu S, Rowberg AJE, Leveillee J, Giustino F, Van de Walle CG.  2021.  First-principles study of electron transport in ScN. arXiv preprint arXiv:2105.07323.
Kang Y, Peelaers H, Van de Walle CG.  2019.  First-principles study of electron-phonon interactions and transport in anatase TiO 2. Physical Review B. 100:121113.
Yan Q, Kioupakis E, Jena D, Van de Walle CG.  2014.  First-principles study of high-field-related electronic behavior of group-III nitrides. Physical Review B. 90:121201.
Himmetoglu B, Janotti A, Peelaers H, Alkauskas A, Van de Walle CG.  2014.  First-principles study of the mobility of SrTiO 3. Physical Review B. 90:241204.
Wang W, Kang Y, Peelaers H, Krishnaswamy K, Van de Walle CG.  2020.  First-principles study of transport in WO 3. Physical Review B. 101:045116.
Steiauf D, Lyons JL, Janotti A, Van de Walle CG.  2014.  First-principles study of vacancy-assisted impurity diffusion in ZnO. APL Materials. 2:096101.
Mu S, Wang M, Peelaers H, Van de Walle CG.  2020.  First-principles surface energies for monoclinic Ga2O3 and Al2O3 and consequences for cracking of (Al x Ga1- x) 2O3. APL Materials. 8:091105.
Lyons JL, Alkauskas A, Janotti A, Van de Walle CG.  2015.  First-principles theory of acceptors in nitride semiconductors. physica status solidi (b). 252:900–908.
Kang Y, Krishnaswamy K, Peelaers H, Van de Walle CG.  2017.  Fundamental limits on the electron mobility of $\beta$-Ga2O3. Journal of Physics: Condensed Matter. 29:234001.
Adamski NL, Dreyer CE, Van de Walle CG.  2019.  Giant polarization charge density at lattice-matched GaN/ScN interfaces. Applied Physics Letters. 115:232103.
Lyons JL, Van de Walle CG.  2021.  Hole Trapping at Acceptor Impurities and Alloying Elements in AlN. physica status solidi (RRL)–Rapid Research Letters.
Adamski NL, Zhu Z, Wickramaratne D, Van de Walle CG.  2017.  Hybrid functional study of native point defects and impurities in ZnGeN2. Journal of Applied Physics. 122:195701.
Gordon L, Abu-Farsakh H, Janotti A, Van de Walle CG.  2014.  Hydrogen bonds in Al2O3 as dissipative two-level systems in superconducting qubits. Scientific reports. 4
Zhu Z, Peelaers H, Van de Walle CG.  2016.  Hydrogen intercalation in MoS 2. Physical Review B. 94(8):085426.
Choi M, Janotti A, Van de Walle CG.  2014.  Hydrogen Passivation of Impurities in Al2O3. ACS applied materials & interfaces. 6:4149–4153.
Lyons JL, Krishnaswamy K, Gordon L, Janotti A, Van de Walle CG.  2016.  Identification of microscopic hole-trapping mechanisms in nitride semiconductors. IEEE Electron Device Letters. 37:154–156.
Choi M, Lyons JL, Janotti A, Van de Walle CG.  2013.  Impact of native defects in high-k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices. physica status solidi (b). 250:787–791.
Swift M, Van de Walle CG.  2016.  Impact of Point Defects on Proton Conduction in Strontium Cerate. The Journal of Physical Chemistry C. 120:9562–9568.
Peelaers H, Steiauf D, Varley JB, Janotti A, Van de Walle CG.  2015.  (In x Ga 1- x) 2 O 3 alloys for transparent electronics. Physical Review B. 92:085206.
Himmetoglu B, Janotti A, Bjaalie L, Van de Walle CG.  2014.  Interband and polaronic excitations in YTiO 3 from first principles. Physical Review B. 90:161102.
Kioupakis E, Yan Q, Van de Walle CG.  2012.  Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodes. Applied Physics Letters. 101(23):231107-231107.
Peelaers H, Van de Walle CG.  2017.  Lack of quantum confinement in Ga 2 O 3 nanolayers. Physical Review B. 96:081409.
Hoang K, Van de Walle CG.  2013.  LiH as a Li+ and H- ion provider. Solid State Ionics. 253:53–56.
Bjaalie L, Janotti A, Himmetoglu B, Van de Walle CG.  2016.  Metal versus insulator behavior in ultrathin SrTiO 3-based heterostructures. Physical Review B. 94(3):035115(6).
Choi M, Janotti A, Van de Walle CG.  2013.  Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.

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