Publications
Filters: Author is Van de Walle, Chris G [Clear All Filters]
Native point defects and dangling bonds in alpha-Al2O3. Journal of Applied Physics. 113(4):44501.
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2013. Nitride-based high-electron-mobility transistor with single-layer InN for mobility-enhanced channel. Applied Physics Express. 8:024302.
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2015. Optimizing n-type doping of ZnGeN 2 and ZnSiN 2. Physical Review B. 100:155206.
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2019. Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.
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2014. PCCP. Phys. Chem. Chem. Phys. 20:12373–12380.
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2018. Phase transformations upon doping in WO3. The Journal of Chemical Physics. 146:214504.
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2017. Phonon-and charged-impurity-assisted indirect free-carrier absorption in Ga 2 O 3. Physical Review B. 100:081202.
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2019. Piezoelectric effect and polarization switching in Al $ _ ${$1-x$}$ $ Sc $ _x $ N. arXiv preprint arXiv:2105.07325.
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2021. Point defects, impurities, and small hole polarons in GdTiO 3. Physical Review B. 93:115316.
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2016. Prospects for high carrier mobility in the cubic germanates. Semiconductor Science and Technology.
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2020. Role of carbon and hydrogen in limiting n-type doping of monoclinic (AlxGa1−x)2O3. Physical Review B. 105:155201.
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2022. Role of oxygen vacancies in crystalline WO 3. Journal of Materials Chemistry C.
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2016. Structural origins of the properties of rare earth nickelate superlattices. Phys. Rev. B. 87(6):60101.
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2013. Sub-band-gap absorption in Ga2O3. Applied Physics Letters. 111:182104.
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2017. Sulfur doping of AlN and AlGaN for improved n-type conductivity. physica status solidi (RRL)-Rapid Research Letters. 9:462–465.
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2015. Surprising stability of polar (001) surfaces of the Mott insulator GdTiO3. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 39:063220.
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2021. Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices. New Journal of Physics. 15:125006.
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2013. Vacancies and small polarons in SrTiO 3. Physical Review B. 90:085202.
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2014.