Publications
Filters: Author is Steiauf, Daniel [Clear All Filters]
Auger Recombination in GaAs from First Principles. ACS Photonics. 1:643–646.
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2014. First-principles calculations of indirect Auger recombination in nitride semiconductors. arXiv preprint arXiv:1412.7555.
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2014. First-principles study of vacancy-assisted impurity diffusion in ZnO. APL Materials. 2:096101.
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2014. (In x Ga 1- x) 2 O 3 alloys for transparent electronics. Physical Review B. 92:085206.
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2015. Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices. New Journal of Physics. 15:125006.
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2013.