Publications

Filters: Author is Van de Walle, Chris G  [Clear All Filters]
Journal Article
Yan Q, Janotti A, Scheffler M, Van de Walle CG.  2014.  Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.
Van de Walle CG.  2018.  PCCP. Phys. Chem. Chem. Phys. 20:12373–12380.
Wang W, Janotti A, Van de Walle CG.  2017.  Phase transformations upon doping in WO3. The Journal of Chemical Physics. 146:214504.
Peelaers H, Van de Walle CG.  2019.  Phonon-and charged-impurity-assisted indirect free-carrier absorption in Ga 2 O 3. Physical Review B. 100:081202.
Bjaalie L, Janotti A, Krishnaswamy K, Van de Walle CG.  2016.  Point defects, impurities, and small hole polarons in GdTiO 3. Physical Review B. 93:115316.
Rowberg A, Krishnaswamy K, Van de Walle CG.  2020.  Prospects for high carrier mobility in the cubic germanates. Semiconductor Science and Technology.
Wang W, Janotti A, Van de Walle CG.  2016.  Role of oxygen vacancies in crystalline WO 3. Journal of Materials Chemistry C.
Hwang J, Son J, Zhang JY, Janotti A, Van de Walle CG, Stemmer S.  2013.  Structural origins of the properties of rare earth nickelate superlattices. Phys. Rev. B. 87(6):60101.
Peelaers H, Van de Walle CG.  2017.  Sub-band-gap absorption in Ga2O3. Applied Physics Letters. 111:182104.
Gordon L, Varley JB, Lyons JL, Janotti A, Van de Walle CG.  2015.  Sulfur doping of AlN and AlGaN for improved n-type conductivity. physica status solidi (RRL)-Rapid Research Letters. 9:462–465.
Kioupakis E, Yan Q, Steiauf D, Van de Walle CG.  2013.  Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices. New Journal of Physics. 15:125006.
Janotti A, Varley JB, Choi M, Van de Walle CG.  2014.  Vacancies and small polarons in SrTiO 3. Physical Review B. 90:085202.

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