Publications
Filters: Author is Lyons, John L [Clear All Filters]
First-principles calculations of optical transitions at native defects and impurities in ZnO. Oxide-based Materials and Devices IX.
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2018. Band alignments and polarization properties of BN polymorphs. Applied Physics Express. 7:031001.
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2014. Computationally predicted energies and properties of defects in GaN. NPJ Computational Materials. 3:1.
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2017. Electron and chemical reservoir corrections for point-defect formation energies. Physical Review B. 93:165206.
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2016. First-principles study of vacancy-assisted impurity diffusion in ZnO. APL Materials. 2:096101.
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2014. First-principles theory of acceptors in nitride semiconductors. physica status solidi (b). 252:900–908.
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2015. Hole Trapping at Acceptor Impurities and Alloying Elements in AlN. physica status solidi (RRL)–Rapid Research Letters.
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2021. Identification of microscopic hole-trapping mechanisms in nitride semiconductors. IEEE Electron Device Letters. 37:154–156.
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2016. Impact of native defects in high-k dielectric oxides on GaN/oxide metal–oxide–semiconductor devices. physica status solidi (b). 250:787–791.
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2013. Role of carbon and hydrogen in limiting n-type doping of monoclinic (AlxGa1−x)2O3. Physical Review B. 105:155201.
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2022. Sulfur doping of AlN and AlGaN for improved n-type conductivity. physica status solidi (RRL)-Rapid Research Letters. 9:462–465.
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2015.