Publications
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Towards understanding the doping mechanism of organic semiconductors by Lewis acids. Nature materials. 18:1327–1334.
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2019. Atomic-Level Insight into the Post Synthesis Bandgap Engineering of a Lewis Basic Polymer Using the Lewis Acid Tris (pentafluorophenyl) borane. Chemistry of Materials.
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2019. Controlling Thermal Conductivity of Two-dimensional Materials via Externally Induced Phonon-Electron Interaction. arXiv preprint arXiv:1904.11011.
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2019. Ultralow thermal conductivity in a two-dimensional material due to surface-enhanced resonant bonding. Materials Today Physics. 7:89–95.
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2018. Oxidative Dehydrogenation of Methane by Isolated Vanadium Oxide Clusters Supported on Au (111) and Ag (111) Surfaces. The Journal of Physical Chemistry C. 117:18475–18483.
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2013. Crystal-symmetry-based selection rules for anharmonic phonon-phonon scattering from a group theory formalism. arXiv preprint arXiv:2103.02769.
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2021. High-Performance Architecture Using Fast Dynamic Reconfigurable Accelerators. IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26(7)
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2018. Band parameters and strain effects in ZnO and group-III nitrides. Semicond. Sci. Technol.. 26:14037.
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2011. Architecture and coevolution of allosteric materials. Proceedings of the National Academy of Sciences. :201615536.
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2017. Principles for Optimal Cooperativity in Allosteric Materials. Biophysical Journal. 114(12):2787-2798.
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2018. Strain effects and band parameters in MgO, ZnO, and CdO. Appl. Phys. Lett.. 101:152105.
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2012. On variational arguments for vibrational modes near jamming. EPL (Europhysics Letters). 114:26003.
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2016. Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN. Appl. Phys. Lett.. 95:121111.
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2009. Role of nitrogen vacancies in the luminescence of Mg-doped GaN. Applied Physics Letters. 100:142110.
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2012. Effects of strain on the band structure of group-III nitrides. Physical Review B. 90:125118.
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2014. Strain effects in group-III nitrides: Deformation potentials for AlN, GaN, and InN. Appl. Phys. Lett.. 95:121111.
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2009. Entropy favors heterogeneous structures of networks near the rigidity threshold. Nature communications. 9:1359.
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2018. Origins of optical absorption and emission lines in AlN. Applied Physics Letters. 105:111104.
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2014. Role of strain in polarization switching in semipolar InGaN/GaN quantum wells. Appl. Phys. Lett.. 97:181102.
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2010. Edge mode amplification in disordered elastic networks. Soft matter. 13:5795–5801.
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2017. First-principles study of high-field-related electronic behavior of group-III nitrides. Physical Review B. 90:121201.
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2014.