Publications

Filters: Author is C.G. Van de Walle [Clear All Filters]

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D

Van de Walle C.G., Choi M., Weber J.R., Lyons J.L., Janotti A.. 2013. Defects at Ge/oxide and IIIäóñV/oxide interfaces. Microelectronic Engineering. 109:211.

Weber J.R, Koehl W.F, Varley J.B, Janotti A., Bucley B.B, Van de Walle C.G., Awschalom D.D. 2011. Defects in SiC for quantum computing. J. Appl. Phys.. 109:102417.

E

Miao M.S, Yan Q.M, Van de Walle C.G.. 2013. Electronic structure of a single-layer InN quantum well in a GaN matrix. Appl. Phys. Lett.. 102:102103.

H

Varley J.B., Peelaers H., Janotti A., Van de Walle C.G.. 2011. Hydrogenated cation vacancies in semiconducting oxides. J. Phys.: Condens. Matter. 23:334212.

Peles A., Van de Walle C.G.. 2007. Hydrogen-related defects in sodium alanate. Journal of Alloys and Compounds. Proceedings of the International Symposium on Metal-Hydrogen Systems, Fundamentals and Applications (MH2006):446-447,459-461.

O

Varley J.B., Weber J.R., Janotti A., Van de Walle C.G.. 2010. Oxygen vacancies and donor impurities in beta-Ga2O3. Appl. Phys. Lett.. 97:142106.

P

Noffsinger J., Kioupakis E., Van de Walle C.G., Louie S.G, Cohen M.L. 2012. Phonon-Assisted Optical Absorption in Silicon from First Principles. Phys. Rev. Lett.. 108:167402.

Weber J.R., Janotti A., Van de Walle C.G.. 2009. Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.

Weber J.R., Janotti A., Van de Walle C.G.. 2009. Point defects in Al2O3 and their impact on gate stacks. Microelectronic Engineering. 86:1756.

Q

Weber J.R., Koehl W.F., Varley J.B., Janotti A., Buckley B.B., Van de Walle C.G., Awschalom D.D.. 2010. Quantum Computing with Defects. Proc. Natl. Acad. Sci.. 107:8513.

R

Van de Walle C.G., Weber J.R., Janotti A.. 2008. Role of hydrogen at germanium/dielectric interfaces. Thin Solid Films. Volume 517, Issue 1, Fifth International Conference on Silicon Epitaxy and Heterostructures (ICSI-5):144-147.

Janotti A., Van de Walle C.G.. 2011. The role of oxygen-related defects and hydrogen impurities in HfO2 and ZrO2. Microelectronic Engineering. 88(7):1452-1456.

Acknowledgements

Please acknowledge the CSC in publications and presentations if you are using our facilities computing resources in your research.

Use was made of computational facilities purchased with funds from the National Science Foundation (CNS-1725797) and administered by the Center for Scientific Computing (CSC). The CSC is supported by the California NanoSystems Institute and the Materials Research Science and Engineering Center (MRSEC; NSF DMR 1720256) at UC Santa Barbara.